pnp 2N6050 ? 2n6051 ? 2n6052 17/10/2012 comset semiconductors 1 | 3 p p o o w w e e r r c c o o m m p p l l e e m m e e n n t t a a r r y y s s i i l l i i c c o o n n t t r r a a n n s s i i s s t t o o r r s s the 2N6050, 2n6051 and 2n6052 are silicon epitaxial-base transistors in monolithic darlington configuration mounted in jedec to-3 metal case. they are inteded for use in power linear and low frequency switching applications. the complementary npn types are 2n6057, 2n6058 and 2n6059 respectively. compliance to rohs. absolute maximum ratings symbol ratings value unit v cbo collector-base voltage i e =0 2N6050 -60 v 2n6051 -80 2n6052 -100 v ceo collector-emittervoltage i b =0 2N6050 -60 v 2n6051 -80 2n6052 -100 v cex collector-emittervoltage v be = 1.5 v 2N6050 -60 v 2n6051 -80 2n6052 -100 v ebo emitter-base voltage i c =0 -5.0 v i c collector current -12 a i cm collector peak current -20 a i b base current -200 ma p t power dissipation @ t c < 25 150 w t j junction temperature 200 c t s storage temperature -65 to +200 thermal characteristics symbol ratings value unit r thj-c thermal resistance, junction to case 1.17 c/w www.datasheet.net/ datasheet pdf - http://www..co.kr/
pnp 2N6050 ? 2n6051 ? 2n6052 17/10/2012 comset semiconductors 2 | 3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i cex collector cutoff current v ce = v cex =-60 v , v be =1.5 v 2N6050 - - -500 a v ce = v cex =-80 v , v be =1.5 v 2n6051 - - v ce = v cex =-100 v v be =1.5 v 2n6052 - - v ce = v cex =-60 v , v be =1.5 v t c =150c 2N6050 - - -5 ma v ce = v cex =-80 v , v be =1.5 v t c =150c 2n6051 - - v ce = v cex =-100 v v be =1.5 v, t c =150c 2n6052 - - i ceo collector cutoff current v ce =-30 vdc, i b =0 2N6050 - - -1.0 ma v ce =-40 vdc, i b =0 2n6051 - - v ce =-50 vdc, i b =0 2n6052 - - i ebo emitter cutoff current v eb =-5 v 2N6050 - - -2.0 ma 2n6051 - - 2n6052 - - v ceo(sus) collector-emitter sustaining voltage (*) i c =-0.1 a 2N6050 -60 - - v 2n6051 -80 - - 2n6052 -100 - - v ce(sat) collector-emitter saturation voltage (*) i c =-6 a, i b =-24 ma 2N6050 - - -2.0 v 2n6051 2n6052 i c =-12 a, i b =-120 ma 2N6050 - - -3.0 2n6051 2n6052 v be(sat) base-emitter saturation voltage (*) i c =-12 a, i b =-120 ma 2N6050 - - -4 v 2n6051 2n6052 v be(on) base-emitter voltage (*) i c =-6 a, v ce =-3 v 2N6050 - - -2.8 v 2n6051 2n6052 f t transition frequency i c =-5 a, v ce =-3 v, f=1 mhz 2N6050 4 - - mhz 2n6051 2n6052 h fe dc current gain (*) v ce =-3 v, i c =-6.0 a 2N6050 750 - 18000 - 2n6051 2n6052 v ce =-3.0 v, i c =-12 a 2N6050 100 - - 2n6051 2n6052 (*) pulse width 300 s, duty cycle 2.0% www.datasheet.net/ datasheet pdf - http://www..co.kr/
pnp 2N6050 ? 2n6051 ? 2n6052 17/10/2012 comset semiconductors 3 | 3 mechanical data case to-3 revised september 2012 ????????? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. comset se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. comset semicon ductors? products are not author ized for use as critical components in life support devices or systems. ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 11 13.10 b 0.97 1.15 c 1.5 1.65 d 8.32 8.92 f 19 20 g 10.70 11.1 n 16.50 17.20 p 25 26 r 4 4.09 u 38.50 39.30 v 30 30.30 pin 1 : base pin 2 : emitter case : collector www.datasheet.net/ datasheet pdf - http://www..co.kr/
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